Feasibility of current mediated amorphous silicon active pixel sensor readout circuits for large area diagnostic medical imaging

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 10313, Issue , 2002, Pages 358-360

  Karim, K S ^a   Nathan, A ^a   Rowlands, J A ^b  

^a UNIVERSITY OF WATERLOO   (Canada)

^b SUNNYBROOK RESEARCH INSTITUTE   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); BIOMEDICAL SIGNAL PROCESSING; DIAGNOSIS; MEDICAL IMAGING; PIXELS; SILICON; TIMING CIRCUITS;

ACTIVE PIXEL SENSOR; AMORPHOUS SILICON (A-SI); CHARGE AMPLIFIERS; COLUMN CHARGES; FLAT PANEL IMAGERS; HIGH-RESOLUTION IMAGING; NOISE PERFORMANCE; PASSIVE PIXEL SENSORS;

AMORPHOUS SILICON;

EID: 84889392170     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.2283926     Document Type: Conference Paper

References (5)

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3. J.M. Boudry and L.E. Antonuk, "Current-noise-power spectra of amorphous silicon thin-film transistors," Journal of Applied Physics, 76, pp. 2529-2534, 1994.
4. X.Y. Chen, M.J. Deen, A.D. van Rheenen, C.X. Peng, and A. Nathan, "Low-frequency noise in thin active layer a-Si: H thin-film transistors," Journal of Applied Physics, 85(11), pp. 7952-7957, 1999.
5. J. Rhayem, D. Rigaud, M. Valenza, N. Szydlo, H. Lebrun, "1/f noise investigations in long channel length amorphous silicon thin-film transistors," Journal of Applied Physics, 87(4), pp. 1983-1989, 2000.