Spin-torque oscillator based on magnetic tunnel junction with a perpendicularly magnetized free layer and in-plane magnetized polarizer

Applied Physics Express

Volumn 6, Issue 10, 2013, Pages

  Kubota, Hitoshi ^a   Yakushiji, Kay ^a   Fukushima, Akio ^a   Tamaru, Shingo ^a   Konoto, Makoto ^a   Nozaki, Takayuki ^a   Ishibashi, Shota ^a   Saruya, Takeshi ^a   Yuasa, Shinji ^a   Taniguchi, Tomohiro ^a   Arai, Hiroko ^a   Imamura, Hiroshi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE DEPENDENCE; MAGNETIC TUNNEL JUNCTION; OSCILLATION PROPERTY; PERPENDICULAR MAGNETIC ANISOTROPY; PERPENDICULAR MAGNETIZATION; REFERENCE LAYER; SPIN-TORQUE OSCILLATOR (STO); SPIN-TORQUE OSCILLATORS;

COBALT COMPOUNDS; NANOSTRUCTURES;

MAGNETIC DEVICES;

EID: 84887644966     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.6.103003     Document Type: Article

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