Characterization of arsenic rich waste slurries generated during gallium arsenide wafer lapping and polishing

2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009

Volumn , Issue , 2009, Pages

  Torrance, Keith W ^a   Keenan, Helen E ^a   Sefcik, Jan ^a   Hursthouse, Andrew ^b  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b UNIVERSITY OF THE WEST OF SCOTLAND   (United Kingdom)

Author keywords

Gallium arsenide; ICP MS; ICP OES; Lapping; Toxicology; Waste slurry

Indexed keywords

CHEMO-MECHANICAL POLISHING; DISTRIBUTION OF PARTICLES; ENVIRONMENTAL ASPECTS; ICP-MS; ICP-OES; LAPPING AND POLISHING; TOXICOLOGY; WASTE SLURRIES;

ARSENIC; EFFLUENTS; ENVIRONMENTAL IMPACT; HAZARDOUS MATERIALS; INDUCTIVELY COUPLED PLASMA MASS SPECTROMETRY; LAPPING; LAPPING MACHINES; MANUFACTURE; MASS SPECTROMETERS; POLISHING; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SLURRIES; TOXICITY;

GALLIUM ARSENIDE;

EID: 84887447246     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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