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Volumn 53, Issue 9-11, 2013, Pages 1681-1686

Trends in automotive power semiconductor packaging

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PERFORMANCE; GALLIUM NITRIDES (GAN); JUNCTION TEMPERATURES; MICRO-ELECTRONIC DEVICES; POWER ELECTRONIC DEVICES; POWER ELECTRONIC MODULES; POWER SEMICONDUCTOR PACKAGING; SILICON CARBIDES (SIC);

EID: 84886929877     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2013.07.088     Document Type: Conference Paper
Times cited : (42)

References (10)
  • 5
    • 84886909672 scopus 로고    scopus 로고
    • Reliability of Planar SKiN interconnect Technology, Chips Nuremberg/Germany
    • U. Scheuermann Semikron elektronik GmbH & Co. KG 2012 Reliability of Planar SKiN interconnect Technology, Chips Nuremberg/Germany
    • (2012) Semikron Elektronik GmbH & Co. KG
    • Scheuermann, U.1
  • 6
    • 84908423716 scopus 로고    scopus 로고
    • Extending the power capacity of IGBT modules
    • 29 May
    • Otsuki M. Extending the power capacity of IGBT modules. PCIM-Europe; 29 May. 2008.
    • (2008) PCIM-Europe
    • Otsuki, M.1
  • 10
    • 84864742647 scopus 로고    scopus 로고
    • Ultra compact and high reliable SiC MOSFET power module with 200 C operating capability
    • Electronic Device Laboratory, Fuji Electric Co., Ltd Bruges, Belgium
    • Masafumi Horio, Yuji Iizuka, Yoshinari Ikeda, Eiji Mochizuki, and Yoshikazu Takahashi Ultra compact and high reliable SiC MOSFET power module with 200 C operating capability ISPSD2012 2012 Electronic Device Laboratory, Fuji Electric Co., Ltd Bruges, Belgium
    • (2012) ISPSD2012
    • Horio, M.1    Iizuka, Y.2    Ikeda, Y.3    Mochizuki, E.4    Takahashi, Y.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.