Infrared conductivity of elemental bismuth under pressure: Evidence for an avoided lifshitz-type semimetal-semiconductor transition

Physical Review Letters

Volumn 104, Issue 23, 2010, Pages

  Armitage, N P ^a,b   Tediosi, Riccardo ^b   Levy F ^b   Giannini, E ^b   Forro, L ^c   Van Der Marel, D ^b  

^a JOHNS HOPKINS UNIVERSITY   (United States)

^b UNIVERSITY OF GENEVA   (Switzerland)

^c EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

INFRARED CONDUCTIVITY; INTERACTION EFFECT; OPTICAL ACCESS; PLASMA FREQUENCIES; PRESSURE CELL; SEMI-METALS; SEMICONDUCTOR TRANSITION;

BISMUTH; PLASMA WAVES;

ORGANIC POLYMERS;

EID: 77953532942     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.104.237401     Document Type: Article

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