Investigation of native point defects and nonstoichiometry mechanisms of two yttrium silicates by first-principles calculations

Journal of the American Ceramic Society

Volumn 96, Issue 10, 2013, Pages 3304-3311

  Liu, Bin ^a   Li, Fangzhi ^b   Sun, Luchao ^a   Wang, Jingyang ^a   Zhou, Yanchum ^c   Wang, Jiemin ^a  

^a INSTITUTE OF METAL RESEARCH   (China)

^b NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

^c AEROSPACE RESEARCH INSTITUTE OF MATERIALS AND PROCESSING TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT FORMATION ENERGIES; FIRST PRINCIPLES METHOD; FIRST-PRINCIPLES CALCULATION; NATIVE POINT DEFECTS; NON-STOICHIOMETRY; PROCESSING CONDITION; SCHOTTKY DEFECTS; YTTRIUM SILICATES;

CALCULATIONS; OXYGEN; POINT DEFECTS; SILICATES;

SILICON;

EID: 84885672774     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/jace.12474     Document Type: Article

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