Response time and mechanism of Pd modified TiO2 gas sensor

Materials Science in Semiconductor Processing

Volumn 17, Issue , 2014, Pages 149-154

  Zhang, Maolin ^a   Ning, Tao ^b   Zhang, Shuyuan ^a   Li, Zhimin ^a   Yuan, Zhanheng ^c   Cao, Quanxi ^a  

^a XIDIAN UNIVERSITY   (China)

^b General Logistics Department of PLA   (China)

^c XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

Activation energy; Gas sensor; Pd modified; Response time; TiO2

Indexed keywords

DIFFERENT TREATMENTS; DIPPING METHOD; RATE OF CHANGE; SENSING FILMS; SENSOR RESISTANCE; SENSOR RESPONSE TIME; SURFACE-MODIFIED; TIO;

ACTIVATION ENERGY; CHEMICAL SENSORS; GAS DETECTORS; PHOTOELECTRONS; RESPONSE TIME (COMPUTER SYSTEMS); SCANNING ELECTRON MICROSCOPY; SENSORS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

TITANIUM DIOXIDE;

EID: 84885631246     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2013.09.014     Document Type: Article

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