Effects of phosphorus diffusion gettering on minority carrier lifetimes of single-crystalline, multi-crystalline and UMG silicon wafer

Current Applied Physics

Volumn 13, Issue 9, 2013, Pages 2103-2108

  Kim, Jeong ^a   Yoon, Sung Yean ^a,b   Choi, Kyoon ^b  

^a Sejong University   (South Korea)

^b Korea Institute of Ceramic Engineering and Technology (KICET)   (South Korea)

Author keywords

Fe distribution simulation; Image analysis; Metal impurity gettering; Phosphorus diffusion; Solar cells

Indexed keywords

GETTERING; GETTERING PROCESS; MINORITY CARRIER LIFETIMES; MULTICRYSTALLINE SI; PHOSPHORUS DIFFUSION; QUASI-STEADY STATE; SINGLE-CRYSTALLINE; UPGRADED METALLURGICAL-GRADE SILICONS;

CRYSTALLINE MATERIALS; DIFFUSION; IMAGE ANALYSIS; IMPURITIES; PHOSPHORUS; SILICON; SILICON SOLAR CELLS; SOLAR CELLS;

SILICON WAFERS;

EID: 84885399041     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2013.09.013     Document Type: Article

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