Development of thin film a-SiO:H/a-Si:H double-junction solar cells and their temperature dependence

Thin Solid Films

Volumn 546, Issue , 2013, Pages 398-403

  Sriprapha, Kobsak ^a   Hongsingthong, Aswin ^a   Krajangsang, Taweewat ^a   Inthisang, Sorapong ^a   Jaroensathainchok, Suttinan ^a   Limmanee, Amornrat ^a   Titiroongruang, Wisut ^b   Sritharathikhun, Jaran ^a  

^a NATIONAL ELECTRONICS AND COMPUTER TECHNOLOGY CENTER   (Thailand)

^b KING MONGKUT'S INSTITUTE OF TECHNOLOGY LADKRABANG   (Thailand)

Author keywords

Amorphous silicon oxide; Solar cell; Temperature dependence; Thin film solar cell

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CARBON; CARBON DIOXIDE; CARBON FILMS; ENERGY GAP; MULTI-JUNCTION SOLAR CELLS; OPEN CIRCUIT VOLTAGE; SILICON; SILICON OXIDES; SILICON SOLAR CELLS; TEMPERATURE; TEMPERATURE DISTRIBUTION; THIN FILM SOLAR CELLS; THIN FILMS;

AMORPHOUS SILICON (A-SI:H); DOUBLE-JUNCTION SOLAR CELLS; HIGH-TEMPERATURE ENVIRONMENT; INCREMENTAL IMPROVEMENTS; LIGHT-INDUCED DEGRADATION; LOW TEMPERATURE COEFFICIENTS; SILICON-BASED THIN FILMS; TEMPERATURE DEPENDENCE;

SOLAR CELLS;

EID: 84885324159     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.05.137     Document Type: Conference Paper

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