High quality hydrogenated amorphous silicon oxide film and its application in thin film silicon solar cells

Current Applied Physics

Volumn 11, Issue 1 SUPPL., 2011, Pages

  Sritharathikhun, Jaran ^a   Moollakorn, Apichan ^a   Kittisontirak, Songkiate ^a   Limmanee, Amornrat ^a   Sriprapha, Kobsak ^a  

^a NATIONAL SCIENCE AND TECHNOLOGY DEVELOPMENT AGENCY   (Thailand)

Author keywords

Absorber layer; Hydrogenated amorphous silicon oxide; Single junction solar cell; Thin film silicon

Indexed keywords

A-SI:H; ABSORBER LAYERS; CRITICAL PARAMETER; FILL FACTOR; H-BASED; HIGH QUALITY; HYDROGENATED AMORPHOUS SILICON; MULTI JUNCTION SOLAR CELLS; PLASMA POWER; SHORT WAVELENGTHS; SINGLE JUNCTION; SINGLE JUNCTION SOLAR CELLS; SOLAR CELL PERFORMANCE; THIN FILM SILICON; THIN-FILM SILICON SOLAR CELLS; VERY HIGH FREQUENCY PLASMA; VHF-PECVD; WIDE GAP;

AMORPHOUS FILMS; CONVERSION EFFICIENCY; DEFECT DENSITY; DEFECTS; DEPOSITION; HYDROGENATION; OXIDE FILMS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; SILICON SOLAR CELLS; SOLAR CELLS; THIN FILMS; VAPOR DEPOSITION;

AMORPHOUS SILICON;

EID: 79953230048     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2010.11.100     Document Type: Conference Paper

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