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Solid State Communications

Volumn 165, Issue , 2013, Pages 49-54

Origin of the temperature dependence of the band gap and PbSe quantum dots of PbS

(7) Dey, P a Paul, J a Byisma, J a Karaiskaj, D a Luther, J M b Beard, M C b Romero, A H c,d

a UNIVERSITY OF SOUTH FLORIDA (United States)

b NATIONAL RENEWABLE ENERGY LABORATORY (United States)

c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

d WEST VIRGINIA UNIVERSITY (United States)

Author keywords

A. Semiconductors; B. Nanostructures; D. Electron phonon interactions; D. Phonons

Indexed keywords

ELECTRON-PHONON INTERACTIONS; ENERGY GAP; III-V SEMICONDUCTORS; INORGANIC COMPOUNDS; NANOCRYSTALS; NARROW BAND GAP SEMICONDUCTORS; PHONONS; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR MATERIALS; TEMPERATURE DISTRIBUTION;

BULK SEMICONDUCTORS; ELECTRONIC BAND GAPS; LEAD CHALCOGENIDES; PHONON DENSITY OF STATE; SEMICONDUCTOR NANOCRYSTALS; SMALL QUANTUM DOTS; TEMPERATURE DEPENDENCE; TWO-OSCILLATOR MODEL;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84885116062 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2013.04.022 Document Type: Article

Times cited : (85)

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