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Volumn 3, Issue 5, 2013, Pages 675-681

Demonstration of a g-band transceiver for future space crosslinks

Author keywords

G band; HEMT; InP; low noise amplifier (LNA); MILSATCOM; mixer; PA; transceiver

Indexed keywords

CARRIER WAVES; G-BAND; GATE LENGTH; INP; MILSATCOM; OUTPUT POWER; RECEIVER NOISE; SPURIOUS RESPONSE;

EID: 84884816572     PISSN: 2156342X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TTHZ.2013.2276118     Document Type: Article
Times cited : (19)

References (11)
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    • New York, NY, USA
    • R. Lai et al., "Sub 50 nm InP HEMT device with Fmax greater than1 THz," in IEEE 2007 IEDM Conf. Dig. IEEE, New York, NY, USA, 2007, pp. 609-611.
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    • Lai, R.1
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    • 80052485541 scopus 로고    scopus 로고
    • THz monolithic integrated circuits using InP high electron mobility transistors
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    • (2011) IEEE Trans. THz Sci. Technol. , vol.1 , Issue.1 , pp. 25-32
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  • 6
    • 80052481811 scopus 로고    scopus 로고
    • An overview of solid-state integrated circuit amplifiers in the submillimeter-wave and THz regime
    • Sep.
    • L. Samoska, "An overview of solid-state integrated circuit amplifiers in the submillimeter-wave and THz regime," IEEE Trans. THz Sci. Technol., vol. 1, no. 1, pp. 9-24, Sep. 2011.
    • (2011) IEEE Trans. THz Sci. Technol. , vol.1 , Issue.1 , pp. 9-24
    • Samoska, L.1
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    • JPL CHARM
    • JPL CHARM [Online]. Available: https://flightopportunities. nasa.gov/media/uploads/pdf/earth-science-suborbital-jpl-workshop-june2012.pdf


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.