The iii-v alloy p-n diode laser and led ultimate lamp

Proceedings of the IEEE

Volumn 101, Issue 10, 2013, Pages 2158-2169

  Holonyak, Nick ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

Light emitting diode (LED); P n junction and transistor; Semiconductor laser

Indexed keywords

DIODES; ENERGY GAP; LIGHT EMITTING DIODES; POINT CONTACTS; QUANTUM WELL LASERS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; TRIODES;

EXCESS CARRIERS; MINORITY CARRIER; P-N JUNCTION; PHOTON EXTRACTIONS; RECOMBINATION CURRENTS; SPECTRAL NARROWING; TRANSISTOR LASERS; VISIBLE SPECTRA;

TRANSISTORS;

EID: 84884595193     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2013.2274909     Document Type: Article

References (24)

1. J. Bardeen and W. H. Brattain, "The transistor, a semi-conductor triode," Phys. Rev., vol. 74, pp. 230-232, Jul. 1948.
2. T. H. Maiman, "Stimulated optical radiation in ruby," Nature, vol. 187, pp. 493-494, Aug. 6, 1960.
3. R. J. Keyes and T. M. Quist, presented at the IRE Solid State Device Res. Conf., Durham, NH, USA, Jul. 1962.
4. N. Holonyak Jr., "Use of metallic halide as a carrier gas in the vapor deposition of III-V compounds," U.S. Patent 3 249 473, May 3, 1966.
5. N. Holonyak, Jr., "Double injection diodes and related DI phenomena in semiconductors," Proc. IRE, vol. 50, no. 12, pp. 2421-2428, Dec. 1962.
6. J. S. Blakemore, Semiconductor Statistics. New York, NY, USA: Pergamon, 1962, pp. 183-189196-202.
7. P. J. Corso, The Day After Roswell. New York, NY, USA: Pocket Books, 1997, pp. 301-303.
8. A. Jacobsen, Area 51. New York, NY, USA: Little, Brown and Co., 2011.
9. R. N. Hall, G. E. Fenner, J. D. Kingsley, T. J. Soltys, and R. O. Carlson, "Coherent light emission from GaAs junctions," Phys. Rev. Lett., vol. 9, pp. 366-368, Nov. 1, 1962.
10. 1-xPx) junctions," Appl. Phys. Lett., vol. 1, pp. 82-83, Dec. 1, 1962.
11. N. Holonyak, Jr., "Semiconductor alloy lasersV1962," IEEE J. Quantum Electron., vol. QE-23, no. 6, pp. 684-691, Jun. 1987.
12. N. Holonyak, Jr., "The semiconductor laser: A 35 year perspective," Proc. IEEE, vol. 85, no. 11, pp. 1678-1693, Nov. 1997.
13. Allied Industrial Electronics Cat., No. 650, Chicago, IL, USA, 1965, p. 77.
14. E. Loebner, "Subhistories of the light emitting diode," IEEE Trans. Electron Devices, vol. ED-23, no. 7, pp. 675-699, Jul. 1976.
15. H. Manchester, "Light of hopeVOr terror," Reader's Dig., vol. 82, no. 490, pp. 97-100, Feb. 1963.
16. N. Holonyak, Jr., "Is the light emitting diode (LED) an ultimate lamp?" Amer. J. Phys., vol. 68, pp. 864-866, Sep. 2000.
17. N. Holonyak, Jr., "The semiconductor p-n junction ultimate lamp," MRS Bull., vol. 30, pp. 515-517, Jul. 2005.
18. 1-xGaxP1-zAsz well (x - 0:13, z - 0:29; - 400 A °) in an InP p-n junction," Appl. Phys. Lett., vol. 31, pp. 534-536, Oct. 15, 1977.
19. M. Feng and N. Holonyak, Jr., "The metamorphosis of the transistor into a laser," Opt. Photon. News, vol. 22, no. 3, pp. 44-49, Mar. 2011.
20. J. Bardeen and W. H. Brattain, "Three-electrode circuit element utilizing semiconductive materials," U.S. Patent 2 524 035, Oct. 3, 1950.
21. T. H. Maiman, "Ruby laser systems," U.S. Patent 3 353 115, Nov. 14, 1967.
22. R. J. Keyes and T. M. Quist, "Recombination radiation emitted by gallium arsenide," Proc. IRE, vol. 50, no. 8, pp. 1822-1823, Aug. 1962.
23. N. Holonyak, Jr., D. C. Jillson, and S. F. Bevacqua, "Halogen vapor transport and growth of epitaxial layers of intermetallic compounds and compound mixtures," in AIME Conf. (August 1961), Los Angeles, vol. 15, J. B. Schroeder, Ed. New York, NY, USA: Interscience, 1962, pp. 49-59.
24. H. Zeiger, "The prehistory of the laser and beyond," Opt. Photon. News, vol. 15, no. 5, pp. 14-15, May 2004.