Elastic, optoelectronic, and thermal properties of cubic CSi 2N4: An ab initio study

Journal of Materials Science

Volumn 48, Issue 23, 2013, Pages 8235-8243

  Haddou, A ^a   Khachai, H ^a   Khenata, R ^b   Litimein, F ^a   Bouhemadou, A ^c   Murtaza, G ^d   Alahmed, Z A ^e   Bin Omran, S ^e   Abbar, B ^a  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^b UNIVERSITÉ DE MASCARA   (Algeria)

^c FERHAT ABBAS UNIVERSITY   (Algeria)

^d ISLAMIA COLLEGE UNIVERSITY   (Pakistan)

^e KING SAUD UNIVERSITY   (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC BAND STRUCTURE; ELECTRONIC BAND STRUCTURE CALCULATION; EXCHANGE-CORRELATION POTENTIAL; EXTINCTION COEFFICIENTS; GENERALIZED GRADIENT APPROXIMATIONS; GROUND STATE PROPERTIES; QUASI-HARMONIC DEBYE MODEL; THERMAL EXPANSION COEFFICIENTS;

ENERGY DISSIPATION; ENERGY GAP; LATTICE CONSTANTS; REFRACTIVE INDEX; SILICON NITRIDE; THERMODYNAMIC PROPERTIES;

ELASTIC MODULI;

EID: 84884280377     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-013-7636-7     Document Type: Article

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