SCOPUS 정보 검색 플랫폼

Volumn 5, Issue 19, 2013, Pages 8915-8920

Sensing extremely limited H2 contents by Pd nanogap connected to an amorphous InGaZnO thin-film transistor

(8) Lee, Young Tack a Jung, Hwaebong a Nam, Seung Hee a,b Jeon, Pyo Jin a Kim, Jin Sung a Jang, Byungjin a Lee, Wooyoung a Im, Seongil a

a Yonsei University (South Korea)

b LG Display Co Ltd (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS INGAZNO; CAPACITOR COUPLING; GATE VOLTAGES; HYDROGEN CONTENTS; HYDROGEN SENSOR; OUTPUT VOLTAGES; SENSOR CIRCUIT; THIN-FILM TRANSISTOR (TFTS);

THIN FILM TRANSISTORS; TRANSISTORS;

AMORPHOUS FILMS;

GALLIUM; HYDROGEN; INDIUM; NANOMATERIAL; OXIDE; PALLADIUM; ZINC;

ARTICLE; CHEMISTRY; ELECTROCHEMICAL ANALYSIS; SEMICONDUCTOR;

ELECTROCHEMICAL TECHNIQUES; GALLIUM; HYDROGEN; INDIUM; NANOSTRUCTURES; OXIDES; PALLADIUM; TRANSISTORS, ELECTRONIC; ZINC;

EID: 84884261861 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c3nr01847d Document Type: Article

Times cited : (13)

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