Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal

Applied Physics Letters

Volumn 103, Issue 11, 2013, Pages

  Nagaoka, Akira ^a   Miyake, Hideto ^b   Taniyama, Tomoyasu ^c   Kakimoto, Koichi ^d   Yoshino, Kenji ^a  

^a UNIVERSITY OF MIYAZAKI   (Japan)

^b MIE UNIVERSITY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATIONS; CONDUCTIVITY MECHANISMS; HALL EFFECT MEASUREMENT; MOTT VARIABLE-RANGE HOPPING; QUATERNARY COMPOUND; TEMPERATURE DEPENDENT; THERMAL ACTIVATION; VALENCE-BAND MAXIMUMS;

ACTIVATION ENERGY; SINGLE CRYSTALS;

ELECTRIC PROPERTIES;

EID: 84884226395     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4821279     Document Type: Article

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