Multi-layer tunnel barrier (Ta2O5/TaO x/TiO2) engineering for bipolar RRAM selector applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2013, Pages

  Woo, Jiyong ^a   Lee, Wootae ^b   Park, Sangsu ^b   Kim, Seonghyun ^b   Lee, Daeseok ^a   Choi, Godeuni ^a   Cha, Euijun ^a   Lee, Ji Hyun ^a   Jung, Woo Young ^a   Park, Chan Gyung ^a   Hwang, Hyunsang ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-POINT ARRAY; HIGH CURRENT DENSITIES; HIGH SELECTIVITY; INTERFACE ENGINEERING TECHNIQUE; OXYGEN PROFILES; PROCESS CONDITION; THERMAL OXIDATION; TOP-ELECTRODE MATERIALS;

INTERFACES (MATERIALS); TANTALUM OXIDES; TITANIUM DIOXIDE;

ATOMIC LAYER DEPOSITION;

EID: 84883380683     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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