A novel conducting bridge resistive memory using a semiconducting dynamic E-field moderating layer

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2013, Pages

  Lee, F M ^a   Lin, Y Y ^a   Chien, W C ^a   Lee, D Y ^a   Lee, M H ^a   Chen, W C ^a   Lung, H L ^a   Hsieh, K Y ^a   Lu, C Y ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING FILAMENT; DEVICE PERFORMANCE; E-FIELD; P-TYPE; RESISTIVE MEMORY; SEMICONDUCTOR LAYERS;

LEAKAGE (FLUID);

MODERATORS;

EID: 84883322686     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. K. Aratani, et al., IEDM Tech Dig., pp. 783-786, 2007
2. T. Sakamoto, et al., Proc. VLSI Tech. Symp, pp. 130-131, 2009
3. Y.Y. Lin, et al., VLSI Symp. Tech Dig., pp 91, 2010