Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers?

17th International Symposium on Space Terahertz Technology 2006, ISSTT 2006

Volumn , Issue , 2006, Pages 127-129

  Gao, J R ^a   Hajenius, M ^a   Tichelaar, F D ^b   Voronov, B ^c   Grishina, E ^c   Klapwijk, T M ^b   Gol'tsman, G ^c   Zorman, C A ^d  

^a SRON NETHERLANDS INSTITUTE FOR SPACE RESEARCH   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c MOSCOW STATE PEDAGOGICAL UNIVERSITY   (Russian Federation)

^d CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENT SUBSTRATES; ELECTRON BOLOMETER; HEB MIXERS; HOT ELECTRON BOLOMETER MIXER; INPUT PARAMETER; MONOCRYSTALLINE STRUCTURES; THIN SUPERCONDUCTING FILMS; TWO TEMPERATURE MODEL;

COMPUTER SIMULATION; EPITAXIAL GROWTH; MIXERS (MACHINERY); SILICON; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

BANDWIDTH;

EID: 84883274437     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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