Phase growth control in low temperature PLD Co: TiO2 films by pressure

Current Applied Physics

Volumn 13, Issue 4, 2013, Pages 670-676

  Rout, S ^a   Popovici, N ^a   Dalui, S ^a,b   Parames M L ^a   Da Silva, R C ^c   Silvestre, A J ^b   Conde, O ^a  

^a UNIVERSITY OF LISBON   (Portugal)

^b INSTITUTO SUPERIOR DE ENGENHARIA DE LISBOA   (Portugal)

^c INSTITUTO SUPERIOR TÉCNICO   (Portugal)

Author keywords

Anatase; Background pressure; Non reactive pld; Optical band gap; Rutile

Indexed keywords

ARGON; ARGON LASERS; COBALT; DEPOSITION; DOPPLER EFFECT; ENERGY GAP; OPTICAL BAND GAPS; OPTICAL PROPERTIES; OXIDE MINERALS; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPING; SUBSTRATES; TEMPERATURE; THIN FILMS; TITANIUM DIOXIDE;

ABSORPTION EDGES; BACKGROUND PRESSURE; LOW TEMPERATURES; PHOTOCATALYTIC ACTIVITIES; REACTIVE PULSED LASER DEPOSITION; RUTILE; STRUCTURAL AND OPTICAL PROPERTIES; SUBSTRATE TEMPERATURE;

EPITAXIAL GROWTH;

EID: 84883230118     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2012.11.005     Document Type: Article

References (38)

1. K. Hashimoto, H. Irie, A. Fujishima, Jpn. J. Appl. Phys. 44 (2005) 8269-8285.
2. S. Chatterjee, K.J. Bhattacharyya, Phys. Chem. C 114 (2010) 9424-9430.
3. D. Chu, X. Yuan, G. Qin, M. Xu, P. Zheng, J. Lu, L.J. Zha, Nanopart. Res. 10 (2008) 357-363.
4. K. Qi, B. Fei, J.H. Xin, Thin Solid Films 519 (2011) 2438-2444.
5. S. Biswas, M.F. Hossain, T. Takahashi, Y. Kubota, A. Fujishima, Phys. Stat. Sol. (A) 205 (2008) 2023-2027.
6. J.C.-S. Wu, C.-H. Chen, J. Photochem, Photobiol. A: Chem. 163 (2004) 509-515.
7. Y. Matsumoto, M. Murakami, T. Shono, T. Hasegawa, T. Fukumura, K. Kawasaki, P. Ahmet, T. Chikyow, S.Y. Koshihara, H. Koinuma, Science 291 (2001) 854-856.
8. Y. Matsumoto, R. Takahashi, M. Murakami, T. Koida, X.-J. Fan, T. Hasegawa, T. Fukumura, M. Kawasaki, S.-Y. Koshihara, H. Koinuma, Jpn. J. Appl. Phys. 40 (2001) L1204-L1206.
9. K. Ueda, H. Tabata, T. Kawai, Appl. Phys. Lett. 79 (2001) 988-990.
10. S.A. Chambers, T.C. Droubay, T.C. Kaspar, in: S.B. Ogale (Ed.), Thin Films and Heterostructures for Oxide Electronics, Springer, New York, 2005, p. 199.
11. L.C.J. Pereira, M.R. Nunes, O.C. Monteiro, A.J. Silvestre, Appl. Phys. Lett. 93 (2008) 222502-222504.
12. H.S. Yang, R.K. Singh, J. Appl. Phys. 95 (2004) 7192-7194.
13. N.H. Hong, W. Prellier, J. Saki, A. Ruyter, J. Appl. Phys. 95 (2004) 7378-7380.
14. S.R. Shinde, S.B. Ogale, S. Das Sarma, J.R. Simpson, H.D. Drew, S.E. Lofland, C. Lanci, J.P. Buban, N.D. Browning, V.N. Kulkarni, J. Higgins, R.P. Sharma, R.L. Greene, T. Venkatesan, Phys. Rev. B 67 (2003) 115211-115216.
15. S.A. Chambers, C.M. Wang, S. Thevuthasan, T. Droubay, D.E. McCready, A.S. Lea, V. Shuahanandan, C.F. Windisch Jr., Thin Solid Films 418 (2002) 197-210.
16. N. Popovici, E. Jimenez, R.C. da Silva, W.R. Branford, L.F. Cohen, O. Conde, J. Non-Cryst. Sol. 352 (2006) 1486-1489.
17. W.R. Branford, J.R. Neal, C.L. Spencer, G.A. Gehring, A.M. Fox, N. Popovici, R.C. da Silva, O. Conde, L.F. Cohen, in: W. Jantsch, F. Schäffler (Eds.), Physics of Semiconductors, Proceedings of the 28th International Conference, vol. 893, American Institute of Physics, 2007, pp. 1199-1200.
18. L.R. Doolitle, Nucl. Instr. Meth. Phys. Res. B 9 (1985) 344-351.
19. X.-Y. Gao, S. Thevuthasan, D.E. McCready, M. Engelhard, J. Cryst. Growth 212 (2000) 178-190.
20. B.D. Cullity, S.R. Stock, Elements of X-ray Diffraction, third ed., Prentice Hall, New Jersey, 2001, p. 351.
21. C.P. Winsor, Proc. Nat. Acad. Sci. 18 (1932) 1-8.
22. S. Amoruso, C. Aruta, R. Bruzzese, X. Wang, U. Scotti di Uccio, Appl. Phys. Lett. 98 (2011) 101501-101503.
23. B.D. Cullity, S.R. Stock, Elements of X-ray Diffraction, third ed., Prentice Hall, New Jersey, 2001, p. 170.
24. D. Reyes-Coronado, G. Rodríguez-Gattorno, M.E. Espinosa-Pesqueira, C. Cab, R. de Coss, G. Oskam, Nanotechnology 19 (2008) 145605-145614.
25. J.C. Manifacier, J. Gasiot, J.P. Fillard, J. Phys. E 9 (1976) 1002-1004.
26. M. Fox, Optical Properties of Solids, Oxford University Press, Oxford, 2010, p. 78.
27. B. Enright, D. Fitzmaurice, J. Phys. Chem. 100 (1996) 1027-1035.
28. H. Tang, K. Prasad, R. Sanjinbs, P.E. Schmid, F. Lévy, J. Appl. Phys. 75 (1994) 2042-2047.
29. P.A. Cox, Transition Metal Oxides: an Introduction to Their Electronic Structure and Properties, Oxford University Press, New York, 2010, p. 128.
30. Min Sik Park, S.K. Kwon, B.I. Min, Phys. Rev. B 65 (2002) 161201-161204.
31. Shang Di Mo, W.Y. Ching, Phys. Rev. B 51 (1995) 13023-13032.
32. M.G. Ha, E.D. Jeong, M.S. Won, H.G. Kim, H.K. Pak, J.H. Jung, B.H. Shon, S.W. Bae, J.S. Lee, J. Korean Phys. Soc. 49 (2006) S675-S679.
33. M. Subramanian, S. Vijayalakshmi, S. Venkataraj, R. Jayavel, Thin Solid Films 516 (2008) 3776-3782.
34. A.N. Banerjee, Nanotechnol. Sci. Appl. 4 (2011) 35-65.
35. W. Li, Y. Wang, H. Lin, S.S. Ismat, C.P. Huang, D.J. Doren, S.A. Rykov, J.G. Chen, M.A. Barteau, Appl. Phys. Lett. 83 (2003) 4143-4145.
36. J.I. Pankove, Optical Processes in Semiconductors, Dover, New York, 1975.
37. B. Choudhury, B. Borah, A. Choudhury, Photochem. Photobiol. 88 (2012) 257-264.
38. Y. Caglar, S. Ilican, M. Caglar, F. Yakuphanoglu, J. Sol-Gel Sci. Technol. 53 (2010) 372-377.