Thermoelectric power generation characteristics of a thin-film device consisting of electrodeposited n-Bi2Te3 and p-Sb 2Te3 thin-film legs

Journal of Electronic Materials

Volumn 42, Issue 9, 2013, Pages 2752-2757

  Kim, Min Young ^a   Oh, Tae Sung ^a  

^a Hong Ik University   (South Korea)

Author keywords

Bi2Te3; electrodeposition; flip chip; Sb 2Te3; Thermoelectric device; thin film

Indexed keywords

ACTUAL TEMPERATURE; APPARENT TEMPERATURE; FLIP CHIP; FLIP-CHIP BONDING; INTERFACIAL RESISTANCES; INTERNAL RESISTANCE; MAXIMUM OUTPUT POWER; THERMOELECTRIC DEVICES;

ELECTRODEPOSITION; FLIP CHIP DEVICES; OPEN CIRCUIT VOLTAGE; THERMOELECTRIC POWER; THIN FILMS;

THIN FILM DEVICES;

EID: 84883133960     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-013-2671-3     Document Type: Article

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