Conduction mechanism in undoped and antimony doped SnO2 based FSP gas sensors

Sensors and Actuators, B: Chemical

Volumn 188, Issue , 2013, Pages 631-636

  Rebholz, Julia ^a   Bonanati, Peter ^a   Jaeschke, Carsten ^a   Hübner, Michael ^a   Mädler, Lutz ^b   Weimar, Udo ^a   Barsan, Nicolae ^a  

^a UNIVERSITY OF TÜBINGEN   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

Band bending; Conduction mechanism; FSP sensors; Sb doping; Work function

Indexed keywords

ACCUMULATION LAYERS; BANDBENDING; CONDUCTION MECHANISM; DEGENERATED SEMICONDUCTORS; FREE CHARGE CARRIERS; OXYGEN CONTAINING ATMOSPHERE; SB DOPING; WORK FUNCTION CHANGE;

OXYGEN; SENSORS; SPRAY PYROLYSIS; THICK FILMS; WORK FUNCTION;

SEMICONDUCTOR DOPING;

EID: 84882438829     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2013.07.063     Document Type: Article

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