|
|
Volumn 11, Issue 3, 2001, Pages 179-185
|
|
The growth of transition metals on H-passivated Si(111) substrates
a
a
a
a
a
a
a
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
AUGER ELECTRON SPECTROSCOPY;
EPITAXIAL GROWTH;
GIANT MAGNETORESISTANCE;
INTERFACES (MATERIALS);
MAGNETOELECTRIC EFFECTS;
MOLECULAR BEAM EPITAXY;
PASSIVATION;
SCANNING TUNNELING MICROSCOPY;
SURFACE ROUGHNESS;
THERMAL EFFECTS;
THICKNESS MEASUREMENT;
ADATOM;
MAGNETOELECTRONIC DEVICES;
TRANSITION METALS;
|
|
EID: 0035382054
PISSN: 1616301X
EISSN: None
Source Type: Journal
DOI: 10.1002/1616-3028(200106)11:3<179::AID-ADFM179>3.0.CO;2-5 Document Type: Article |
|
Times cited : (4)
|
|
References (4)
|
