Electrochemical induced pitting defects at gate oxide patterning

IEEE Transactions on Semiconductor Manufacturing

Volumn 26, Issue 3, 2013, Pages 315-318

  Park, Jungtae ^a   Cho, Sungjin ^b   Hawthorne, Jeff ^c  

^a SAMSUNG Electronics   (South Korea)

^b Qcept Technologies   (South Korea)

^c Qcept Technologies   (United States)

Author keywords

Electrochemical processes; inspection; semiconductor device manufacture

Indexed keywords

ELECTROCHEMICAL PROCESS; HIGHLY-CORRELATED; MANUFACTURING LINES; MANUFACTURING PROCESS; OPTICAL INSPECTION; PATTERNING PROCESS; PHYSICAL DEFECTS; TECHNOLOGY NODES;

GATES (TRANSISTOR); INSPECTION; PHOTORESISTS; PITTING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; WET ETCHING;

DEFECTS;

EID: 84881332720     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2013.2259271     Document Type: Article

References (5)

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