P-n junction characteristics of graphene oxide and reduced graphene oxide on n-type Si(111)

Journal of Physics and Chemistry of Solids

Volumn 74, Issue 11, 2013, Pages 1509-1514

  Phan, Duy Thach ^a   Chung, Gwiy Sang ^a  

^a University of Ulsan   (South Korea)

Author keywords

A. Nanostructures; B. Chemical synthesis; D. Electrical properties

Indexed keywords

CONCENTRATION-DEPENDENT; DEGREE OF OXIDATIONS; IV CHARACTERISTICS; OXYGEN FUNCTIONAL GROUPS; P TYPE SEMICONDUCTOR; REDUCED GRAPHENE OXIDES; REDUCED GRAPHENE OXIDES (RGO); SEMICONDUCTOR BEHAVIOR;

ELECTRIC PROPERTIES; FUNCTIONAL GROUPS; HYDRAZINE; OXIDATION; OXYGEN; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SILICON;

GRAPHENE;

EID: 84881071957     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2013.02.007     Document Type: Article

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