Investigation of hole transporting properties in thin-film and single-crystal organic field-effect transistor based on Dinaphtho[2,1-b:10,20-d] thiophene

Japanese Journal of Applied Physics

Volumn 52, Issue 5 PART 2, 2013, Pages

  Nakahara, Katsumasa ^a   Mitsui, Chikahiko ^a   Okamoto, Toshihiro ^a   Yamagishi, Masakazu ^a   Soeda, Junshi ^a   Miwa, Kazumoto ^a   Sato, Hiroyasu ^b   Yamano, Akihito ^b   Uemura, Takafumi ^a   Takeya, Jun ^a  

^a OSAKA UNIVERSITY   (Japan)

^b RIGAKU CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTOR (FETS); HOLE TRANSPORTING; HOLE-TRANSPORTING PROPERTY; HOMO ENERGY LEVELS; P-TYPE ORGANIC SEMICONDUCTORS; PHYSICOCHEMICAL PROPERTY; TRANSFER INTEGRAL; X-RAY SINGLE CRYSTAL;

ORGANIC FIELD EFFECT TRANSISTORS; SINGLE CRYSTALS; THIOPHENE;

HOLE MOBILITY;

EID: 84880903779     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.05DC10     Document Type: Article

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