Sub-10 nm epitaxial graphene nanoribbon FETs

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2011, Pages 39-40

  Tahy, K ^a   Hwang, W S ^a   Tedesco, J L ^b   Myers Ward, R L ^b   Campbell, P M ^b   Eddy, C R ^b   Gaskill, D K ^b   Xing, H ^a   Seabaugh, A ^a   Jena, D ^a  

^a University of Notre Dame   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL ELECTRONICS; EPITAXIAL GRAPHENE; EXFOLIATED GRAPHENE; FIELD EFFECT TRANSISTOR (FETS); GRAPHENE NANORIBBONS (GNRS); LARGE AREA DEVICES; ROOM-TEMPERATURE OPERATION; SUBSTANTIAL ENERGY;

ENERGY GAP; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GRAPHENE; SILICON CARBIDE; THERMOELECTRIC EQUIPMENT;

NANORIBBONS;

EID: 84880709566     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2011.5994411     Document Type: Conference Paper

References (4)

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2. X. Li, X. Wang, L. Zhang, S. Lee, and H. Dai, Science, vol. 319, p. 1229 (2008).
3. P. Kim, M. Y. Han, A. F. Young, I. Meric, and K. L. Shepard, IEDM, p. 241 (2009).
4. J. L. Tedesco et alECS Trans. Vol. 19, pp. 137-150 (2009).