High-energy-storage density capacitors of Bi (Ni 1/2 Ti 1/2) O 3- PbTiO 3 thin films with good temperature stability

Journal of the American Ceramic Society

Volumn 96, Issue 7, 2013, Pages 2061-2064

  Xie, Zhenkun ^a   Peng, Bin ^a   Meng, Siqin ^a   Zhou, Yuanyuan ^a   Yue, Zhenxing ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SOLUTION DEPOSITION TECHNIQUES; DENSE THIN FILMS; HIGH-CAPACITANCE DENSITY; HIGH-ENERGY DENSITIES; PEROVSKITE STRUCTURES; ROOM TEMPERATURE; TEMPERATURE STABILITY; WIDE TEMPERATURE RANGES;

CAPACITORS; ELECTRIC FIELDS; NICKEL;

THIN FILMS;

EID: 84880292217     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/jace.12443     Document Type: Article

References (12)

1. B. J. Chu, X. Zhou, K. L. Ren, and, B. Neese, " A Dielectric Polymer with High Electric Energy Density and Fast Discharge Speed," Science, 313, 334-6 (2006).
2. M. Rahimabady, K. Yao, S. Arabnejad, and, L. Lu, " Intermolecular Interactions and High Dielectric Energy Storage Density in Poly(Vinylidene Fluoride-Hexafluoropropylene)/Poly(Vinylidene Fluoride) Blend Thin Films," Appl. Phys. Lett., 100, 252907-4 (2012).
3. 3 Antiferroelectric Thin Films," J. Am. Ceram. Soc., 92 [5] 1133-5 (2009).
4. 3 Relaxor Ferroelectric Thin Films," J. Appl. Phys., 112, 114111-6 (2012).
5. 3 Ceramics," Jpn. J. Appl. Phys., 40, 5999-6002 (2001).
6. 3," Jpn. J. Appl. Phys., 41, 2009-104 (2002).
7. 3 Ceramics for High-Temperature Capacitor Applications," J. Am. Ceram. Soc., 95 [11] 3554-61 (2012).
8. 3 Ceramics," J. Am. Ceram. Soc., 92 [8] 1719-24 (2009).
9. 3," J. Appl. Phys., 98, 034108-4 (2005).
10. 3," J. Am. Ceram. Soc., 95 [4] 1170-3 (2012).
11. F. Xu, S. Trolier-McKinstry, W. Ren, B. M. Xu, and, Z. L. Xie, " Domain Wall Motion and its Contribution to the Dielectric and Piezoelectric Properties of Lead Zirconate Titanate Films," J. Appl. Phys., 89 [2] 1336-48 (2001).
12. 3 Thin Films and Heterostructures on Different Substrates," J. Appl. Phys., 98, 114101-7 (2005).