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An HgTe layer of 70 nm thickness is grown on a CdTe substrate by molecular beam epitaxy. The HgTe layer is etched in an Ar plasma to get a 2-(m-wide HgTe stripe. On the top surface of the HgTe stripe, two 70-nm-thick Nb electrodes-with a spacing of 200 nm-are deposited by using e-beam lithography, ultrahigh vacuum sputtering, and liftoff techniques. Additionally, a protective bilayer consisting of 10 nm Al and 10 nm Ru is deposited on top of the Nb electrodes. Note that, prior to Nb sputtering, the HgTe surface is cleaned by exposing it to a very mild, low-power Ar plasma, resulting in more transparent HgTe-Nb interfaces without affecting the quality of the surface [7]
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An HgTe layer of 70 nm thickness is grown on a CdTe substrate by molecular beam epitaxy. The HgTe layer is etched in an Ar plasma to get a 2-μm-wide HgTe stripe. On the top surface of the HgTe stripe, two 70-nm-thick Nb electrodes-with a spacing of 200 nm-are deposited by using e-beam lithography, ultrahigh vacuum sputtering, and liftoff techniques. Additionally, a protective bilayer consisting of 10 nm Al and 10 nm Ru is deposited on top of the Nb electrodes. Note that, prior to Nb sputtering, the HgTe surface is cleaned by exposing it to a very mild, low-power Ar plasma, resulting in more transparent HgTe-Nb interfaces without affecting the quality of the surface [7].
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The transport measurements are performed in current-bias mode in an Oxford dilution refrigerator at a base temperature of 25 mK. The differential resistance is measured as a function of current bias, temperature, and magnetic field by using standard lock-in detection techniques, and the dc voltage across the junction is measured simultaneously (note that the data of Figs. 3 a 3 b and 4(a) are obtained by pure dc measurements). The signals of all four wires to and from the junction are filtered at different temperature stages: low-pass filters at room temperature; radiofrequency "eccosorb"filters at 4 K; low-pass RC filters and Cu powder filters at 25 mK. Filtering is required to suppress the high-frequency noise, which is destructive for a Josephson supercurrent [13-15,18]
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The transport measurements are performed in current-bias mode in an Oxford dilution refrigerator at a base temperature of 25 mK. The differential resistance is measured as a function of current bias, temperature, and magnetic field by using standard lock-in detection techniques, and the dc voltage across the junction is measured simultaneously (note that the data of Figs. 3(a), 3(b), and 4(a) are obtained by pure dc measurements). The signals of all four wires to and from the junction are filtered at different temperature stages: low-pass filters at room temperature; radiofrequency "eccosorb"filters at 4 K; low-pass RC filters and Cu powder filters at 25 mK. Filtering is required to suppress the high-frequency noise, which is destructive for a Josephson supercurrent [13-15,18].
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