Calculation of confined phonon spectrum in narrow silicon nanowires using the valence force field method

Journal of Electronic Materials

Volumn 42, Issue 7, 2013, Pages 2091-2097

  Karamitaheri, Hossein ^a,b   Neophytou, Neophytos ^a   Taheri, Mohsen Karami ^c   Faez, Rahim ^b   Kosina, Hans ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b SHARIF UNIVERSITY OF TECHNOLOGY   (Iran)

^c ISLAMIC AZAD UNIVERSITY   (Iran)

Author keywords

Confined phonons; Landauer formula; lattice thermal conductance; modified valence force field method; silicon nanowires

Indexed keywords

CONFINED PHONONS; LANDAUER FORMULA; SILICON NANOWIRES; THERMAL CONDUCTANCE; VALENCE FORCE FIELDS;

BALLISTICS; DISPERSIONS; ELECTRIC POWER FACTOR; LIGHT VELOCITY; NANOWIRES; PHONONS; SILICON;

THERMAL CONDUCTIVITY;

EID: 84879800535     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-013-2533-z     Document Type: Article

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