Thermal conductivity of diameter-modulated silicon nanowires within a frequency-dependent model for phonon boundary scattering

Journal of Electronic Materials

Volumn 42, Issue 7, 2013, Pages 1509-1513

  Zianni, X ^a,b   Chantrenne, P ^c  

^a Technological Educational Institution of Chalkida   (Greece)

^b INSTITUTE OF MICROELECTRONICS   (Greece)

^c UNIVERSITÉ DE LYON   (France)

Author keywords

boundary scattering; nanowires; silicon; Thermal conductivity; thermoelectric efficiency; transmissivity

Indexed keywords

BOUNDARY SCATTERING; FIRST BRILLOUIN ZONE; FREQUENCY-DEPENDENT; FREQUENCY-DEPENDENT MODEL; PHONON-BOUNDARY SCATTERING; THERMOELECTRIC APPLICATION; THERMOELECTRIC EFFICIENCY; TRANSMISSIVITY;

KINETIC THEORY; NANOWIRES; PHONONS; SCATTERING; SILICON;

THERMAL CONDUCTIVITY;

EID: 84879800024     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-012-2304-2     Document Type: Article

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