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Volumn 87, Issue 23, 2013, Pages

Tunneling-induced high-efficiency four-wave mixing in asymmetric quantum wells

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EID: 84879728813     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.87.235310     Document Type: Article
Times cited : (45)

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    • The length of one period is given by l=11.0 nm (shallow well thickness) +3.8 nm (barrier thickness) +9.5 nm (deep will thickness) +20.0 nm (buffer layer thickness) = 44.3 nm.
    • The length of one period is given by l = 11.0 nm (shallow well thickness) + 3.8 nm (barrier thickness) + 9.5 nm (deep will thickness) + 20.0 nm (buffer layer thickness) = 44.3 nm.


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