Inverted GaInP / (In)GaAs / InGaAs triple-junction solar cells with low-stress metamorphic bottom junctions

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2008, Pages

  Geisz, J F ^a   Kurtz, Sarah R ^a   Wanlass, M W ^a   Ward, J S ^a   Duda, A ^a   Friedman, D J ^a   Olson, J M ^a   McMahon, W E ^a   Moriarty, T E ^a   Kiehl, J T ^a   Romero, M J ^a   Norman, A G ^a   Jones, K M ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIRST DESIGNS; GAINP; II-IV SEMICONDUCTORS; LOW STRESS; PHOTOVOLTAIC PERFORMANCE; THREADING DISLOCATION; TRIPLE JUNCTION SOLAR CELLS; ULTRA-THIN;

DESIGN; EFFICIENCY; ENERGY GAP; GERMANIUM; SOLAR CELLS;

SEMICONDUCTOR JUNCTIONS;

EID: 84879720081     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2008.4922452     Document Type: Conference Paper

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