Comparison of N- and P-type high efficiency silicon solar cell performance under low illumination conditions

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2008, Pages

  Gong, Chun ^a   Posthuma, Niels ^a   Dross, Frederic ^a   Kerschaver, Emmanuel Van ^a   Giovanni, Flamand ^a   Beaucarne, Guy ^a   Poortmans, Jef ^a   Hoofman, R J O M ^b  

^a IMEC   (Belgium)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BACK SURFACE FIELDS; CAPTURE CROSS SECTIONS; ELECTRONS AND HOLES; HIGH EFFICIENCY SILICON SOLAR CELLS; LOW ILLUMINATIONS; MINORITY CARRIER; SCAVENGING ENERGY; SHOCKLEY-READ-HALL RECOMBINATION MODELS;

QUANTUM WELL LASERS;

SILICON SOLAR CELLS;

EID: 84879710597     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2008.4922441     Document Type: Conference Paper

References (5)

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2. JA Paradiso and T. Starner, "Energy scavenging for mobile and wireless electronics", IEEE pervasive computing 4, no. 1, pp 18-27, 2005
3. D. MacDonald and Andres Cuevas, "Validity of simplified Shockley-Read-Hall statistics for modeling carrier lifetimes in crystalline silicon", Physical Review B 67, 2003, pp. 075203-1-075203-7
4. F. Dross et al., "High-efficiency (average 16. 0%) industrial-type rear-contacted multi-crystalline silicon solar cells", proceedings of the 17th International Photovoltaic Science and Engineering Conference, PVSEC17, Fukuoka, December 2007
5. C. Schmiga et al., "19% Efficiency n-type Czochralski Silicon Solar Cells with Screen-printed Aluminum-alloyed Rear Emitter", Progress in Photovoltaics 14, 2006, pp. 533-539