Photoinduced charge transfer process in p-Cu2O/n-Cu2O homojunction film and its photoelectric gas-sensing properties

Journal of Colloid and Interface Science

Volumn 405, Issue , 2013, Pages 242-248

  Jiang, Tengfei ^a   Xie, Tengfeng ^a   Yang, Wanshi ^a   Fan, Haimei ^a   Wang, Dejun ^a  

^a JILIN UNIVERSITY   (China)

Author keywords

Cu2O; Gas sensor; Homojunction; Interfacial charge transfer

Indexed keywords

BUILT-IN ELECTRIC FIELDS; GAS SENSING PROPERTIES; HOMOJUNCTION; INTERFACIAL CHARGE TRANSFER; PHOTOINDUCED CHARGE TRANSFER; PHOTOINDUCED ELECTRONS; SURFACE PHOTOVOLTAGE TECHNIQUE; TWO-STEP ELECTRODEPOSITIONS;

ACETALDEHYDE; CHARGE TRANSFER; CHEMICAL SENSORS; GAS DETECTORS; IRRADIATION; PHOTOELECTRICITY;

COPPER;

ACETALDEHYDE; COPPER OXIDE;

ARTICLE; CHEMICAL STRUCTURE; DESORPTION; ELECTRIC FIELD; ELECTRON; IRRADIATION; PHOTOELECTRIC GAS SENSOR; PRIORITY JOURNAL; ROOM TEMPERATURE; SENSOR;

ABSORPTION; ACETALDEHYDE; COPPER; ELECTRONS; GASES; LIGHT; MICROSCOPY, ELECTRON, SCANNING; PHOTOCHEMISTRY; SEMICONDUCTORS; TEMPERATURE; X-RAY DIFFRACTION;

EID: 84879554087     PISSN: 00219797     EISSN: 10957103     Source Type: Journal    
DOI: 10.1016/j.jcis.2013.05.059     Document Type: Article

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