Surface interrogation scanning electrochemical microscopy (SI-SECM) of photoelectrochemistry at a W/Mo-BiVO4 semiconductor electrode: Quantification of hydroxyl radicals during water oxidation

Journal of Physical Chemistry C

Volumn 117, Issue 23, 2013, Pages 12093-12102

  Park, Hyun S ^a   Leonard, Kevin C ^a   Bard, Allen J ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-INTENSITY IRRADIATIONS; OXYGEN EVOLUTION REACTION; PHOTO-ELECTROCHEMISTRY; SCANNING ELECTROCHEMICAL MICROSCOPY; SEMI-CONDUCTOR SURFACES; SEMICONDUCTOR ELECTRODE; SURFACE CONCENTRATION; SURFACE INTERROGATION;

DECAY (ORGANIC); FREE RADICAL REACTIONS; IRRADIATION; OXIDATION; PHOTONS; RATE CONSTANTS; REACTION KINETICS; SCANNING ELECTRON MICROSCOPY; SCANNING PROBE MICROSCOPY;

REACTION INTERMEDIATES;

EID: 84879112923     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp400478z     Document Type: Article

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