Graphene Hall bar with an asymmetric pn-junction

Journal of Applied Physics

Volumn 113, Issue 19, 2013, Pages

  Milovanovic S P ^a   Ramezani Masir, M ^a   Peeters, F M ^a  

^a UNIVERSITY OF ANTWERP   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED POTENTIALS; BALLISTIC REGIME; BAR STRUCTURE; BEND RESISTANCES; HALL RESISTANCE; MAGNETIC FIELD DEPENDENCES; POTENTIAL STEPS; SIGN REVERSAL;

GRAPHENE;

INTERFACE STATES;

EID: 84878393586     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4805350     Document Type: Article

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