Memory effect in a topological surface state of Bi2Te 2Se

ACS Nano

Volumn 7, Issue 5, 2013, Pages 4105-4110

  Fu, Ying Shuang ^a   Hanaguri, Tetsuo ^a   Yamamoto, Shuhei ^b   Igarashi, Kyushiro ^b   Takagi, Hidenori ^c,d   Sasagawa, Takao ^b  

^a RIKEN Center for Emergent Matter Science   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c RIKEN   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

Bi2Te2Se; hysteresis; Landau level; STM; topological insulator

Indexed keywords

CHARGING EFFECT; CONDUCTANCE SPECTRA; LANDAU LEVELS; MEMORY EFFECTS; RANDOM POTENTIALS; SPATIALLY INHOMOGENEOUS; STM; TOPOLOGICAL INSULATORS;

BIAS VOLTAGE; ELECTRIC INSULATORS; HYSTERESIS; TOPOLOGY;

SURFACE STATES;

EID: 84878333030     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn400378f     Document Type: Article

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