Assessment of Au-Ge die attachment for an extended junction temperature range in power applications

International Conference and Exhibition on High Temperature Electronics 2010, HiTEC 2010

Volumn , Issue , 2010, Pages 32-39

  Tanimoto, Satoshi ^a,c   Matsui, Kohei ^b,c   Murakami, Yoshinori ^a,c   Yamaguchi, Hiroshi ^c   Okumura, Hajime ^c  

^a NISSAN MOTOR CO   (Japan)

^b FUJI ELECTRIC CO   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Au Ge; Ceramic substrate; Die attachment; High temperature; Power device; SiC

Indexed keywords

AU-GE; CERAMIC SUBSTRATES; DIE ATTACHMENT; HIGH TEMPERATURE; POWER DEVICES; SIC;

EUTECTICS; FLIP CHIP DEVICES; GERMANIUM; METAL CLADDING; SILICON CARBIDE; SILICON NITRIDE; THERMAL CYCLING;

DIES;

EID: 84878222661     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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