Towards thinner and low bowing silicon solar cells: Form the boron and aluminum co-doped back surface field with thinner metallization film

Progress in Photovoltaics: Research and Applications

Volumn 21, Issue 4, 2013, Pages 456-461

  Gu, Xin ^a   Yu, Xuegong ^a   Xu, Jinglin ^a,b   Fan, Ruixin ^a   Yang, Deren ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

B Al co doped back surface field; higher carrier concentration; low bowing silicon solar cell; lower surface recombination velocity

Indexed keywords

BACK SURFACE FIELDS; CO-DOPED; DOPANT CONCENTRATIONS; LOW FIRING TEMPERATURE; PASTE THICKNESS; SOLAR CELL EFFICIENCIES; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATIONS;

CARRIER CONCENTRATION; METALLIZING; OHMIC CONTACTS; PRINTING; SILICON WAFERS;

SILICON SOLAR CELLS;

EID: 84878184398     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1206     Document Type: Article

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