Growth and photoelectric properties of twinned ZnSe1-xTe x nanotips

IEEE Transactions on Nanotechnology

Volumn 10, Issue 3, 2011, Pages 379-384

  Chang, S J ^a   Chih, S H ^a   Hsiao, C H ^a   Lan, B W ^a   Wang, S B ^a   Cheng, Y C ^b   Li, T C ^b   Chang, S P ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Molecular beam epitaxy (MBE); photodetector; wurtzite; zinc blende; ZnSeTe nanotips

Indexed keywords

APPLIED BIAS; AS-GROWN; CONTRAST RATIO; HIGH DENSITY; MULTI-DOMAINS; PHOTOELECTRIC PROPERTY; WURTZITES; ZINC BLENDE;

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; PHOTONS; ZINC; ZINC SULFIDE;

NANOTIPS;

EID: 84878056097     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2040626     Document Type: Article

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