Fine structure of charged and neutral excitons in InAs-(formula presented) quantum dots

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 15, 2002, Pages 1-4

  Finley, J J ^a   Mowbray, D J ^a   Skolnick, M S ^a   Ashmore, A D ^a   Baker, C ^a   Monte, A F G ^a   Hopkinson, M ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84878022998     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.153316     Document Type: Article

References (27)

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10. Ref. 6 reported similar ensemble PL spectra (formula presented) higher in energy from (formula presented) dots and Ref. 7 (formula presented) lower in energy from (formula presented)
11. Separate work under pulsed excitation shows that at high power the weak feature at 1880 meV becomes much more prominent, supporting its origin as wetting layer recombination.
12. Studies of over 15 dots showed that (formula presented) showed the characteristic line structure of Figs. 11(b)-11(d), with mean (formula presented) splitting of (formula presented) and mean (formula presented) energy below the (formula presented) midpoint of (formula presented) A study of similar single InAlAs-AlGaAs dots reported only unpolarized spectra, in contrast to the present work, see, e.g., K. Hinzer, et al., Phys. Rev. B 63, 075314 (2001).
13. H.W. van Kesteren, et al., Phys. Rev. B 41, 5283 (1990).
14. V.D. Kulakovskii, et al., Phys. Rev. Lett. 82, 1780 (1999). For convenience, we use the same notation as in this paper.
15. L. Besombes, K. Kheng, and D. Martrou, Phys. Rev. Lett. 85, 425 (2000).
16. M. Bayer, et al., Phys. Rev. B 61, 7273 (2000).
17. The same spin Hamiltonian has been discussed very extensively for excitons bound to axial defect centers in bulk semiconductors, see, e.g., P.J. Dean, D.G. Thomas, and C.J. Frosch, J. Phys. C 17, 747 (1984), which gives a comprehensive list of references dating back to the 1960s.
18. J.W. Morgan and T.N. Morgan, Phys. Rev. B 1, 739 (1970).
19. The dark state splitting is given by (formula presented) Since the bright state splitting (formula presented) determined by the difference between (formula presented) and (formula presented) the sum of (formula presented) and (formula presented) must lead to a dark state splitting of at least 1 meV. (formula presented) is unsplit to within a precision of at most (formula presented) excluding its interpretation as dark state recombination. L. Besombes, Ph.D. thesis, Université Joseph Fourier, 2001, instead proposes for CdTe dots that both the (formula presented) and (formula presented) short-range exchange splittings are close to zero, and that the bright state splitting arises from the long-range exchange interaction.
20. A similar attribution for a polarized doublet, unpolarized singlet combination has been suggested by M. Bayer et al., in Proceedings of MSS10 Conference, Linz, 2001 (unpublished).
21. A small diamagnetic term of (formula presented) is included in the fits to Figs. 33(a),33(c), corresponding to a very reasonable in-plane spatial diameter of (formula presented) for the (formula presented) and (formula presented) wave functions using an exciton reduced mass of (formula presented)
22. The dark and bright state g values given by (formula presented) and (formula presented) can only be equal in the very unlikely event that either (formula presented) or (formula presented) is equal to zero.
23. A.D. Ashmore et al., in Proceedings of MSS10 Conference, Linz, 2001 (unpublished).
24. See, e.g., A.J. Shields, et al., Adv. Phys. 44, 47 (1995);
25. A.J. ShieldsPhys. Rev. B 52, 7841 (1995).
26. P. Ballet, et al., J. Appl. Phys. 90, 481 (2001).
27. Related phenomena occur in mixed type-I-type-II GaAs/AlAs quantum wells, see, e.g., A. Manassen, et al., Phys. Rev. B 54, 10 609 (1996).