Mechanism to generate a two-dimensional electron gas at the surface of the charge-ordered semiconductor BaBiO3

Physical Review Letters

Volumn 110, Issue 20, 2013, Pages

  Vildosola, Verónica ^a   Güller, Francisco ^a,b   Llois, Ana María ^a,b  

^a DEPARTAMENTO DE FÍSICA   (Argentina)

^b UNIVERSIDAD DE BUENOS AIRES   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

BULK PROPERTIES; CHARGE ORDERING; FIRST-PRINCIPLES CALCULATION; INNER LAYER; NANO-STRUCTURING; OUTER LAYER; PHYSICAL MECHANISM; SELF-DOPING;

CALCULATIONS; ELECTRON GAS; SEMICONDUCTOR DOPING; SURFACES;

TWO DIMENSIONAL;

EID: 84877888651     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.110.206805     Document Type: Article

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