Electroresistance and current-induced metastable states in the thin film of half-doped manganite Pr0.5Sr0.5MnO3

Journal of Applied Physics

Volumn 113, Issue 17, 2013, Pages

  Wang, J F ^a   Chen, L P ^b   Jiang, Y C ^a   Gao, J ^a  

^a SUZHOU UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b ZHEJIANG NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRORESISTANCE; HALF-DOPED MANGANITES; INITIAL STATE; INTERFACIAL EFFECTS; LOW TEMPERATURES; META-STABLE STATE; TEMPERATURE RANGE; WEAK CURRENTS;

BANKS (BODIES OF WATER); ELECTRIC RESISTANCE; MANGANESE OXIDE; THIN FILMS;

MANGANITES;

EID: 84877777379     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4800841     Document Type: Conference Paper

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