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Volumn 102, Issue 18, 2013, Pages

Quantification of trap state densities in GaAs heterostructures grown at varying rates using intensity-dependent time resolved photoluminescence

(7) Haughn, C R a Schmieder, K J a Zide, J M O a Barnett, A b Ebert, C c Opila, R a Doty, M F a

a UNIVERSITY OF DELAWARE (United States)

b UNIVERSITY OF NEW SOUTH WALES (Australia)

c Veeco MOCVD (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER RECOMBINATION; DOUBLE HETEROSTRUCTURES; INTENSITY-DEPENDENT; NON DESTRUCTIVE; QUANTITATIVE APPROACH; TIME-RESOLVED PHOTOLUMINESCENCE; TRAP DENSITY; TRAP STATE DENSITY;

PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM;

GALLIUM ARSENIDE;

EID: 84877774671 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4802841 Document Type: Article

Times cited : (28)

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