9. 3: Control of threshold voltage in back channel etch type amorphous indium gallium zinc oxide thin film transistors

Digest of Technical Papers - SID International Symposium

Volumn 42 1, Issue , 2011, Pages 104-106

  Lee, Seung Min ^a   Ryoo, Chang Il ^a   Park, Jae Wook ^a   Han, Joonsoo ^a   Kim, Dae Won ^a   Kim, Yong Yub ^a   Kang, Im Kuk ^a   Seo, Kyung Han ^a   Koh, Young Ju ^a   Han, Dong Min ^a   Choi, Yong Ho ^a   Seo, Hyun Sik ^a   Kim, Bong Chul ^a   Cha, Soo Youle ^a   Bae, Jong Uk ^b   Kim, Chang Dong ^b   Jun, Myungchul ^b   Hwang, Yong Kee ^b  

^a LG Display Co Ltd   (South Korea)

^b AmorePacific Corporation   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; PASSIVATION; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILM CIRCUITS; THRESHOLD VOLTAGE; ZINC OXIDE;

AMORPHOUS-INDIUM GALLIUM ZINC OXIDES; BACK CHANNELS; BOTTOM GATE; ENHANCEMENT MODES; GATE DRIVER CIRCUIT; GATE DRIVER INTEGRATION; PASSIVATION LAYER; PROCESS PRESSURE;

THIN FILM TRANSISTORS;

EID: 84863202098     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.3621002     Document Type: Conference Paper

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