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Volumn 574, Issue , 2013, Pages 67-70

Effects of oxygen vacancy on the electrical and magnetic properties of anatase Fe0.05Ti0.95O2-δ films

(11) Li, Q H a Wei, L a Xie, Y R a Jiang, F a Zhou, T a Hu, G X a Jiao, J b Chen, Y X a Liu, G L a Yan, S S a Mei, L M a

a SHANDONG UNIVERSITY (China)

b Department of Electrical and Computer Engineering (United States)

Author keywords

Anatase; Epitaxial films; Magnetic materials; Semiconductors

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; DEPOSITION; ENERGY GAP; EPITAXIAL FILMS; EPITAXIAL GROWTH; FERROMAGNETISM; FILMS; MAGNETIC MATERIALS; MAGNETISM; OXYGEN; POLARONS; PULSED LASER DEPOSITION; SATURATION MAGNETIZATION; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; THIN FILMS; TITANIUM DIOXIDE; VACANCIES; X RAY DIFFRACTION;

ELECTRICAL AND MAGNETIC PROPERTY; MAGNETIC POLARON MODELS; OXYGEN VACANCY CONCENTRATION; ROOM TEMPERATURE FERROMAGNETISM; SEMICONDUCTOR FILMS; STRONG CORRELATION; STRUCTURAL CHARACTERIZATION; STRUCTURE AND PROPERTIES;

OXYGEN VACANCIES;

EID: 84877012611 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2013.04.052 Document Type: Article

Times cited : (19)

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