Thin film multichip packaging for high temperature digital electronics

Proceedings - 2011 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2011

Volumn , Issue , 2011, Pages 39-45

  Fang, Kun ^a   Zhang, Rui ^a   Isaacs Smith, Tami ^a   Wayne Johnson, R ^a   Andarawis, Emad ^b   Vert, Alexey ^b  

^a AUBURN UNIVERSITY   (United States)

^b GE GLOBAL RESEARCH   (United States)

Author keywords

High temperature electronics; Thin film modules

Indexed keywords

ELECTRICAL CHARACTERISTIC; ELECTRICAL CONNECTION; HIGH-TEMPERATURE ELECTRONICS; INTER-LAYER DIELECTRICS; MULTI-LAYER THIN FILM; PECVD SILICON NITRIDE; THIN FILM MODULES; THIN FILM SUBSTRATE;

DEPOSITS; DIES; DIGITAL INTEGRATED CIRCUITS; ELECTRIC CONNECTORS; GOLD DEPOSITS; HIGH TEMPERATURE APPLICATIONS; PACKAGING; SILICON CARBIDE; SILICON NITRIDE; THIN FILMS;

FILM PREPARATION;

EID: 84876909984     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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2. Massachusetts Institute of Technology, "The Future of Geothermal Energy: Impact of Enhanced Geothermal Systems (EGS) on the United States in the 21st Century", 2006.
3. US Department of Energy, "Geothermal Technologies Program Fact Sheet".
4. R. Ásmundsson, R. Normann, H. Lubotzki, and B. Livesay, "High Temperature Downhole Tools-Recommendations for Enhanced and Supercritical Geothermal Systems", IPGT High Temperature Tools Working Group, January 2011.
5. Rui Zhang, R. Wayne Johnson, Vinayak Tilak, Tan Zhang, and David Shaddock, "Characterization of Thick Film Technology for 300°C Packaging," Proceedings of the International High Temperature Electronics Conference, May 11-13, 2010, Albuquerque, NM, pp. 97-107.