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Volumn 110, Issue 17, 2013, Pages

Quantum hall effect in hydrogenated graphene

(13) Guillemette, J a Sabri, S S a Wu, Binxin a Bennaceur, K a Gaskell, P E a Savard, M a Levesque P L b Mahvash, F a,c Guermoune, A a,c Siaj, M c Martel, R b Szkopek, T a Gervais, G a

a MCGILL UNIVERSITY (Canada)

b UNIVERSITÉ DE MONTRÉAL (Canada)

c UNIVERSITÉ DU QUÉBEC À MONTRÉAL (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT SCATTERING; DENSITY OF STATE; DISORDER PARAMETERS; ELECTRON LOCALIZATIONS; LOW TEMPERATURES; MAGNETIC CONFINEMENT; STRONG MAGNETIC FIELDS; ZERO MAGNETIC FIELDS;

COLOSSAL MAGNETORESISTANCE; CRYSTAL IMPURITIES; ELECTRON GAS; HALL EFFECT DEVICES; MAGNETIC FIELDS; QUANTUM HALL EFFECT; QUANTUM THEORY; TWO DIMENSIONAL;

GRAPHENE;

EID: 84876701116 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.110.176801 Document Type: Article

Times cited : (33)

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