Aluminum-based high-temperature (>200°C) Sj packaging for SiC power converters

Proceedings - 2006 International Symposium on Microelectronics, IMAPS 2006

Volumn , Issue , 2006, Pages 734-741

  Hopkins, Douglas C ^a   Kellerman, David W ^b   Basaran, Cemal ^a   Gomez, Juan ^c  

^a UNIVERSITY AT BUFFALO   (United States)

^b Material Solutions LLC   (United States)

^c UNIVERSIDAD EAFIT   (Colombia)

Author keywords

Aluminum nitride substrate; Aluminum silicon carbide composite; High temperature; Power electronics; Transistor

Indexed keywords

ALUMINUM CONDUCTORS; ALUMINUM NITRIDE (ALN); ALUMINUM SILICON CARBIDE; ELECTRICAL ISOLATION; HIGH TEMPERATURE; HIGH-TEMPERATURE POWER; POWER DENSITIES; SILICON CARBIDES (SIC);

ALUMINUM; CHIP SCALE PACKAGES; DISSIMILAR METALS; INTERFACES (MATERIALS); MICROELECTRONICS; PACKAGING; POWER ELECTRONICS; SILICON CARBIDE; TRANSISTORS;

ALUMINUM NITRIDE;

EID: 84876516581     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. D. C. Hopkins, D. W. Kellerman, R. A. Wunderlich, C. Basaranl, J. Gomez. "High- Temperatiire, High-Density Packaging of a 60kW Converter for >200°C Embedded Operation, " Proc. IEEE Applied Power Electronics Conference. Dallas. TX. paper 24.3, pp. 19-24 March 2006.
2. Handbook of Materials for Product Design. Harper, McGraw Hill, 2.85.
3. D.C. Hopkins, J. M. Pitarressi and J. A. Karker, "Systems Design Considerations for Using a Direct-Attached-Ceramic MMC Power Package, " PCIM '96 EUROPE. Proc. 32nd Int'I Power Conversion Conf. 1996, pp.683-9 Numberg. Germany.
4. Lin, J.C. and Chan, J.Y. "On the Resistance of Silver Migration in Ag-Pd Conductive Thick Films under Humid Environment and Applied DC Field.", Materials Chemistry and Physics 43 (1996) 256-265.